Nowadays, there is a million of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) in digital, analog, and mixed-signals circuits, and noise in transistors has limited the minimum signal level that a circuit can process with acceptable quali
Investigation of power generation microdevices that utilize micromachining or MEMS for use in portable and self-powered systems. Autonomous and portable devices demand the need for small, lightweight energy supplies that can replace the use of conven
By Claudia Wong, Kelvin Yuk, G. R. Branner and Syed Reza Bahadur Originally Appears: European Microwave Circuits Conference, pp. 587-590, Oct. 2011. Abstract A wideband frequency doubler based on AlGaN/GaN HEMT devices is presented. Rationale for the
By Kelvin Yuk, G. R. Branner and David McQuate First appears: IEEE MTT-S Int. Microw. Symp., pp. 753-756, Jun. 2009. A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new
Microwave frequency multipliers provide a high performance means of generating microwave and millimeter-wave signals in a wide variety of communications and radar systems. The advances in active microwave frequency multipliers due to improvements in
By Kelvin Yuk and Jorge Campos Written: June 7, 2002 Even though research on Silicon-on-Insulator (SOI) devices has proven it to be the next technology that will significantly improve the performance of digital integrated circuits, many skeptics have
By Kelvin Yuk Presented: Mar 11, 2003 Like Dislike
Published at WAMICON on April 25, 2017 J. Tan, K. S. Yuk, and G.R. Branner Dept. of Electrical and Computer Engineering University of California at Davis Davis, USA Abstract A wideband Gallium Nitride (GaN) HEMT power amplifier (PA) achieving 7.6W
A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current (Ids ) formulation with self-heating and charge-trapping modifications is presented. The new drain current equation accurately model
High power, high conversion gain microwave frequency doublers using wide bandgap semiconductor devices are developed. A method of determining the optimal harmonic terminations using accurate nonlinear computer models and load- and source-pull simulat
By Kelvin Yuk and Chi Ho Yue EEC282 June 14, 2002 Introduction The purpose of this project is to explore details and benefits of co-design. We choose to implement the 1024-Point FFT for its applications in signal processing and communication. The
By Kelvin Yuk Description of Antenna Testing A detailed block diagram of the test setup illustrating the signal path is shown in Figure 1. A photograph of the antenna setup is shown in Figure 2. The antenna range was set up on the roof of Kemper
